Method of making a nonvolatile phase change memory cell having a reduced contact area

A method is described to form a nonvolatile memory cell having a contact area between a phase-change material such as a chalcogenide and a heat source which is smaller than photolithographic limits. A conductive or semiconductor pillar is exposed at a dielectric surface and recessed by selective etc...

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Bibliographische Detailangaben

Hauptverfasser:	HERNER S. BRAD, RAGHURAM USHA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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