Abrasive, method of polishing target member and process for producing semiconductor device
To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two cryst...
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| creator | TANNO KIYOHITO ASHIZAWA TORANOSUKE OOTUKI YUUTO YOSHIDA MASATO TERAZAKI HIROKI KURATA YASUSHI MATSUZAWA JUN |
| description | To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive. |
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Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; INORGANIC CHEMISTRY ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120424&DB=EPODOC&CC=US&NR=8162725B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120424&DB=EPODOC&CC=US&NR=8162725B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANNO KIYOHITO</creatorcontrib><creatorcontrib>ASHIZAWA TORANOSUKE</creatorcontrib><creatorcontrib>OOTUKI YUUTO</creatorcontrib><creatorcontrib>YOSHIDA MASATO</creatorcontrib><creatorcontrib>TERAZAKI HIROKI</creatorcontrib><creatorcontrib>KURATA YASUSHI</creatorcontrib><creatorcontrib>MATSUZAWA JUN</creatorcontrib><title>Abrasive, method of polishing target member and process for producing semiconductor device</title><description>To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. 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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INORGANIC CHEMISTRY MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | Abrasive, method of polishing target member and process for producing semiconductor device |
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