Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy

To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ICHINOSE KAZUHITO, IMAI YUKARI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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