Method of forming metal/high- gate stacks with high mobility

The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZAFAR SUFI, JAMMY RAJARAO, ANDREONI WANDA, CALLEGARI ALESSANDRO C, NARAYANAN VIJAY, D'EMIC CHRISTOPHER P, LACEY DIANNE L, SHEPARD, JR. JOSEPH F, GOUSEV EVGENI, JAMISON PAUL C, MCFEELY FENTON R, PIGNEDOLI CARLO A, CARTIER EDUARD A, GRIBELYUK MICHAEL A, CURIONI ALESSANDRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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