Enhanced field effect transistor

An enhanced FET capable of controlling current above and below a gate of the FET. The FET is formed on a semiconductor substrate. A source and drain are formed in the substrate (or in a well in the substrate). A first epitaxial layer of similar doping to the source and drain are grown on the source...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PAULSEN DAVID PAUL, SHEETS, II JOHN EDWARD, CHRISTENSEN TODD ALAN, ALLEN DAVID HOWARD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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