Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus
A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). Th...
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| creator | IFUKU TOSHIHIRO MATSUDA TAKANORI |
| description | A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). The laminate structure has a first crystal phase layer having a crystal structure selected from a tetragonal structure, a rhombohedral structure, a pseudocubic structure and a monoclinic structure, a second crystal phase layer having a crystal structure different from the crystal structure of said first crystal phase layer and a boundary layer arranged between the first crystal phase layer and the second crystal phase layer with a crystal structure gradually changing in a thickness direction of the layer. The thicknesses of the first and second crystal phase layer differ. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8137461B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8137461B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8137461B23</originalsourceid><addsrcrecordid>eNrjZEgJyEytyk_NSU0uKcpMViguTSouKUosSdVRKECRADJyU_NKdBRyMgtLM1MUUjKLkzMSi9JTFTJSE1MUEvNSMGUSCwoSgWaVFvMwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYAtDY3MTM0MnI2MilAAAymU_Ng</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus</title><source>esp@cenet</source><creator>IFUKU TOSHIHIRO ; MATSUDA TAKANORI</creator><creatorcontrib>IFUKU TOSHIHIRO ; MATSUDA TAKANORI</creatorcontrib><description>A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). The laminate structure has a first crystal phase layer having a crystal structure selected from a tetragonal structure, a rhombohedral structure, a pseudocubic structure and a monoclinic structure, a second crystal phase layer having a crystal structure different from the crystal structure of said first crystal phase layer and a boundary layer arranged between the first crystal phase layer and the second crystal phase layer with a crystal structure gradually changing in a thickness direction of the layer. The thicknesses of the first and second crystal phase layer differ.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120320&DB=EPODOC&CC=US&NR=8137461B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120320&DB=EPODOC&CC=US&NR=8137461B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IFUKU TOSHIHIRO</creatorcontrib><creatorcontrib>MATSUDA TAKANORI</creatorcontrib><title>Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus</title><description>A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). The laminate structure has a first crystal phase layer having a crystal structure selected from a tetragonal structure, a rhombohedral structure, a pseudocubic structure and a monoclinic structure, a second crystal phase layer having a crystal structure different from the crystal structure of said first crystal phase layer and a boundary layer arranged between the first crystal phase layer and the second crystal phase layer with a crystal structure gradually changing in a thickness direction of the layer. The thicknesses of the first and second crystal phase layer differ.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEgJyEytyk_NSU0uKcpMViguTSouKUosSdVRKECRADJyU_NKdBRyMgtLM1MUUjKLkzMSi9JTFTJSE1MUEvNSMGUSCwoSgWaVFvMwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYAtDY3MTM0MnI2MilAAAymU_Ng</recordid><startdate>20120320</startdate><enddate>20120320</enddate><creator>IFUKU TOSHIHIRO</creator><creator>MATSUDA TAKANORI</creator><scope>EVB</scope></search><sort><creationdate>20120320</creationdate><title>Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus</title><author>IFUKU TOSHIHIRO ; MATSUDA TAKANORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8137461B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>IFUKU TOSHIHIRO</creatorcontrib><creatorcontrib>MATSUDA TAKANORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IFUKU TOSHIHIRO</au><au>MATSUDA TAKANORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus</title><date>2012-03-20</date><risdate>2012</risdate><abstract>A piezoelectric substrate of a perovskite-type oxide is expressed by a general formula of ABO3 having a laminate structure of a single crystal structure or a uniaxial crystal structure expressed by (Pb1-xMx)xm(ZryTi1-y)O3 (where M represents an element selected from La, Ca, Ba, Sr, Bi, Sb and W). The laminate structure has a first crystal phase layer having a crystal structure selected from a tetragonal structure, a rhombohedral structure, a pseudocubic structure and a monoclinic structure, a second crystal phase layer having a crystal structure different from the crystal structure of said first crystal phase layer and a boundary layer arranged between the first crystal phase layer and the second crystal phase layer with a crystal structure gradually changing in a thickness direction of the layer. The thicknesses of the first and second crystal phase layer differ.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Piezoelectric substrate, piezoelectric element, liquid discharge head and liquid discharge apparatus |
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