Metal-oxide-semiconductor device including a multiple-layer energy filter
A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically is...
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| creator | RIEL HEIKE E RIESS WALTER H BJOERK MIKAEL T KNOCH JOACHIM SCHMID HEINZ KARG SIEGFRIED F |
| description | A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8129763B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8129763B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8129763B23</originalsourceid><addsrcrecordid>eNqNyjkOwjAQBVA3FAi4w1zABYnE0oJAUFABdWTZP9FIE9vygsjtoeAAVK95c3W9oRjR4c0OOmNkG7yrtoREDi-2IPZWqmM_kKGxSuEo0GImJIJHGibqWQrSUs16IxmrnwtF59PjeNGIoUOOxn576Z733brZbzftoWn_KB_ADDUD</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Metal-oxide-semiconductor device including a multiple-layer energy filter</title><source>esp@cenet</source><creator>RIEL HEIKE E ; RIESS WALTER H ; BJOERK MIKAEL T ; KNOCH JOACHIM ; SCHMID HEINZ ; KARG SIEGFRIED F</creator><creatorcontrib>RIEL HEIKE E ; RIESS WALTER H ; BJOERK MIKAEL T ; KNOCH JOACHIM ; SCHMID HEINZ ; KARG SIEGFRIED F</creatorcontrib><description>A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120306&DB=EPODOC&CC=US&NR=8129763B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120306&DB=EPODOC&CC=US&NR=8129763B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RIEL HEIKE E</creatorcontrib><creatorcontrib>RIESS WALTER H</creatorcontrib><creatorcontrib>BJOERK MIKAEL T</creatorcontrib><creatorcontrib>KNOCH JOACHIM</creatorcontrib><creatorcontrib>SCHMID HEINZ</creatorcontrib><creatorcontrib>KARG SIEGFRIED F</creatorcontrib><title>Metal-oxide-semiconductor device including a multiple-layer energy filter</title><description>A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjkOwjAQBVA3FAi4w1zABYnE0oJAUFABdWTZP9FIE9vygsjtoeAAVK95c3W9oRjR4c0OOmNkG7yrtoREDi-2IPZWqmM_kKGxSuEo0GImJIJHGibqWQrSUs16IxmrnwtF59PjeNGIoUOOxn576Z733brZbzftoWn_KB_ADDUD</recordid><startdate>20120306</startdate><enddate>20120306</enddate><creator>RIEL HEIKE E</creator><creator>RIESS WALTER H</creator><creator>BJOERK MIKAEL T</creator><creator>KNOCH JOACHIM</creator><creator>SCHMID HEINZ</creator><creator>KARG SIEGFRIED F</creator><scope>EVB</scope></search><sort><creationdate>20120306</creationdate><title>Metal-oxide-semiconductor device including a multiple-layer energy filter</title><author>RIEL HEIKE E ; RIESS WALTER H ; BJOERK MIKAEL T ; KNOCH JOACHIM ; SCHMID HEINZ ; KARG SIEGFRIED F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8129763B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RIEL HEIKE E</creatorcontrib><creatorcontrib>RIESS WALTER H</creatorcontrib><creatorcontrib>BJOERK MIKAEL T</creatorcontrib><creatorcontrib>KNOCH JOACHIM</creatorcontrib><creatorcontrib>SCHMID HEINZ</creatorcontrib><creatorcontrib>KARG SIEGFRIED F</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RIEL HEIKE E</au><au>RIESS WALTER H</au><au>BJOERK MIKAEL T</au><au>KNOCH JOACHIM</au><au>SCHMID HEINZ</au><au>KARG SIEGFRIED F</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Metal-oxide-semiconductor device including a multiple-layer energy filter</title><date>2012-03-06</date><risdate>2012</risdate><abstract>A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Metal-oxide-semiconductor device including a multiple-layer energy filter |
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