Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same
Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer overlying the oxide layer, forming a layer of high-k dielectric material overlying the oxygen-diffusion bar...
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creator | CHOWDHURY MURSHED M SCHAEFFER JAMES K |
description | Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer overlying the oxide layer, forming a layer of high-k dielectric material overlying the oxygen-diffusion barrier layer, forming a layer of conductive material overlying the layer of high-k dielectric material, selectively removing portions of the layer of conductive material, the layer of high-k dielectric material, the oxygen-diffusion barrier layer, and the oxide layer to form a gate stack, and forming source and drain regions about the gate stack. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8114739B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8114739B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8114739B23</originalsourceid><addsrcrecordid>eNqNizEOgkAQAGksjPqH_QAFYqK2Go09mtiR5W4PNuF2yd2h8nspfIDNTDOzzJ4VeTYqdjRJA1h6sSF4c-pAP1NLklt2boysAg2GwBSgx2kmigVPqVMLbj4dNoENJpYWInpaZwuHfaTNz6sMrpf7-ZbToDXFAQ0JpfpRHYpity-Pp235R_IFfYM6iw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same</title><source>esp@cenet</source><creator>CHOWDHURY MURSHED M ; SCHAEFFER JAMES K</creator><creatorcontrib>CHOWDHURY MURSHED M ; SCHAEFFER JAMES K</creatorcontrib><description>Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer overlying the oxide layer, forming a layer of high-k dielectric material overlying the oxygen-diffusion barrier layer, forming a layer of conductive material overlying the layer of high-k dielectric material, selectively removing portions of the layer of conductive material, the layer of high-k dielectric material, the oxygen-diffusion barrier layer, and the oxide layer to form a gate stack, and forming source and drain regions about the gate stack. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120214&DB=EPODOC&CC=US&NR=8114739B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120214&DB=EPODOC&CC=US&NR=8114739B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHOWDHURY MURSHED M</creatorcontrib><creatorcontrib>SCHAEFFER JAMES K</creatorcontrib><title>Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same</title><description>Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer overlying the oxide layer, forming a layer of high-k dielectric material overlying the oxygen-diffusion barrier layer, forming a layer of conductive material overlying the layer of high-k dielectric material, selectively removing portions of the layer of conductive material, the layer of high-k dielectric material, the oxygen-diffusion barrier layer, and the oxide layer to form a gate stack, and forming source and drain regions about the gate stack. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEOgkAQAGksjPqH_QAFYqK2Go09mtiR5W4PNuF2yd2h8nspfIDNTDOzzJ4VeTYqdjRJA1h6sSF4c-pAP1NLklt2boysAg2GwBSgx2kmigVPqVMLbj4dNoENJpYWInpaZwuHfaTNz6sMrpf7-ZbToDXFAQ0JpfpRHYpity-Pp235R_IFfYM6iw</recordid><startdate>20120214</startdate><enddate>20120214</enddate><creator>CHOWDHURY MURSHED M</creator><creator>SCHAEFFER JAMES K</creator><scope>EVB</scope></search><sort><creationdate>20120214</creationdate><title>Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same</title><author>CHOWDHURY MURSHED M ; SCHAEFFER JAMES K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8114739B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHOWDHURY MURSHED M</creatorcontrib><creatorcontrib>SCHAEFFER JAMES K</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHOWDHURY MURSHED M</au><au>SCHAEFFER JAMES K</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same</title><date>2012-02-14</date><risdate>2012</risdate><abstract>Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer overlying the oxide layer, forming a layer of high-k dielectric material overlying the oxygen-diffusion barrier layer, forming a layer of conductive material overlying the layer of high-k dielectric material, selectively removing portions of the layer of conductive material, the layer of high-k dielectric material, the oxygen-diffusion barrier layer, and the oxide layer to form a gate stack, and forming source and drain regions about the gate stack. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same |
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