Method and process for forming a self-aligned silicide contact

The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MO RENEE T, WILDMAN HORATIO S, COBB MICHAEL A, FRYE ASA, KRISHNAN MAHADEVAIYER, LAVOIE CHRISTIAN, STRANE JAY W, CABRAL, JR. CYRIL, KNARR RANDOLPH F, PRANATHARTHI HARAN BALASUBRAMANIAN S, MANSSON ANDREW P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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