Interconnect structures and methods

Interconnect structures and methods are disclosed. In one embodiment, an interconnect structure includes a via extendable through a workpiece from a first side of the workpiece to a second side of the workpiece. The via is partially filled with a conductive material and has sidewalls. The interconne...

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Hauptverfasser: RUCKMICH STEFAN, SCHEDEL THORSTEN, ZIMMERMANN BERND, BERGHOF VOLKER
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creator RUCKMICH STEFAN
SCHEDEL THORSTEN
ZIMMERMANN BERND
BERGHOF VOLKER
description Interconnect structures and methods are disclosed. In one embodiment, an interconnect structure includes a via extendable through a workpiece from a first side of the workpiece to a second side of the workpiece. The via is partially filled with a conductive material and has sidewalls. The interconnect structure includes a contact coupled to the conductive material in the via proximate the first side of the workpiece. The conductive material in the via comprises a recessed region comprising a landing zone proximate the second side of the workpiece.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8097955B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8097955B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8097955B23</originalsourceid><addsrcrecordid>eNrjZFD2zCtJLUrOz8tLTS5RKC4pKk0uKS1KLVZIzEtRyE0tychPKeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwRYGluaWpqZORsZEKAEA0_QmyQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Interconnect structures and methods</title><source>esp@cenet</source><creator>RUCKMICH STEFAN ; SCHEDEL THORSTEN ; ZIMMERMANN BERND ; BERGHOF VOLKER</creator><creatorcontrib>RUCKMICH STEFAN ; SCHEDEL THORSTEN ; ZIMMERMANN BERND ; BERGHOF VOLKER</creatorcontrib><description>Interconnect structures and methods are disclosed. In one embodiment, an interconnect structure includes a via extendable through a workpiece from a first side of the workpiece to a second side of the workpiece. The via is partially filled with a conductive material and has sidewalls. The interconnect structure includes a contact coupled to the conductive material in the via proximate the first side of the workpiece. The conductive material in the via comprises a recessed region comprising a landing zone proximate the second side of the workpiece.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120117&amp;DB=EPODOC&amp;CC=US&amp;NR=8097955B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20120117&amp;DB=EPODOC&amp;CC=US&amp;NR=8097955B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RUCKMICH STEFAN</creatorcontrib><creatorcontrib>SCHEDEL THORSTEN</creatorcontrib><creatorcontrib>ZIMMERMANN BERND</creatorcontrib><creatorcontrib>BERGHOF VOLKER</creatorcontrib><title>Interconnect structures and methods</title><description>Interconnect structures and methods are disclosed. In one embodiment, an interconnect structure includes a via extendable through a workpiece from a first side of the workpiece to a second side of the workpiece. The via is partially filled with a conductive material and has sidewalls. The interconnect structure includes a contact coupled to the conductive material in the via proximate the first side of the workpiece. The conductive material in the via comprises a recessed region comprising a landing zone proximate the second side of the workpiece.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2zCtJLUrOz8tLTS5RKC4pKk0uKS1KLVZIzEtRyE0tychPKeZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwRYGluaWpqZORsZEKAEA0_QmyQ</recordid><startdate>20120117</startdate><enddate>20120117</enddate><creator>RUCKMICH STEFAN</creator><creator>SCHEDEL THORSTEN</creator><creator>ZIMMERMANN BERND</creator><creator>BERGHOF VOLKER</creator><scope>EVB</scope></search><sort><creationdate>20120117</creationdate><title>Interconnect structures and methods</title><author>RUCKMICH STEFAN ; SCHEDEL THORSTEN ; ZIMMERMANN BERND ; BERGHOF VOLKER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8097955B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>RUCKMICH STEFAN</creatorcontrib><creatorcontrib>SCHEDEL THORSTEN</creatorcontrib><creatorcontrib>ZIMMERMANN BERND</creatorcontrib><creatorcontrib>BERGHOF VOLKER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RUCKMICH STEFAN</au><au>SCHEDEL THORSTEN</au><au>ZIMMERMANN BERND</au><au>BERGHOF VOLKER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Interconnect structures and methods</title><date>2012-01-17</date><risdate>2012</risdate><abstract>Interconnect structures and methods are disclosed. In one embodiment, an interconnect structure includes a via extendable through a workpiece from a first side of the workpiece to a second side of the workpiece. The via is partially filled with a conductive material and has sidewalls. The interconnect structure includes a contact coupled to the conductive material in the via proximate the first side of the workpiece. The conductive material in the via comprises a recessed region comprising a landing zone proximate the second side of the workpiece.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Interconnect structures and methods
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T19%3A48%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RUCKMICH%20STEFAN&rft.date=2012-01-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8097955B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true