Method for leakage reduction in fabrication of high-density FRAM arrays

A method is provided for fabricating a ferroelectric capacitor structure including a method for etching and cleaning patterned ferroelectric capacitor structures in a semiconductor device. The method comprises etching portions of an upper electrode, etching ferroelectric material, and etching a lowe...

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Bibliographische Detailangaben

Hauptverfasser:	MOISE THEODORE S, CELII FRANCIS GABRIEL, SUMMERFELT SCOTT R, UDAYAKUMAR KEZHAKKEDATH R, SHINN GREGORY B
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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