Semiconductor device and manufacturing method thereof

An element larger than silicon is ion-implanted to a contact liner in an N-channel region to break constituent atoms of the contact liner in the N-channel region. An element larger than silicon is ion-implanted to the contact liner in a P-channel region to break constituent atoms of the contact line...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KANEGAE KENSHI, YAMADA MASARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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