Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter
An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and i...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | KIM SAM-WOONG JANG KYUNG-IC YE KYUNG-HWAN REIM YONG-SUP |
description | An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8080813B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8080813B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8080813B23</originalsourceid><addsrcrecordid>eNqNi7EKAjEQRNNYiPoP-wEK6jXWHorWan0suY0XSHZDslf4917AQjuZ4g3Mm7mJV2HwMQVkpbwGX8EYoGgerY6ZQBz4bwmQe4ikg_R1c5Kj5ycgWEGtLeBrsjyDDvR7XZqZw1Bo9eHCwPl0by8bStJRSWiJSbvH7bCdsmuO--YP5Q3J-kGZ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter</title><source>esp@cenet</source><creator>KIM SAM-WOONG ; JANG KYUNG-IC ; YE KYUNG-HWAN ; REIM YONG-SUP</creator><creatorcontrib>KIM SAM-WOONG ; JANG KYUNG-IC ; YE KYUNG-HWAN ; REIM YONG-SUP</creatorcontrib><description>An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111220&DB=EPODOC&CC=US&NR=8080813B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111220&DB=EPODOC&CC=US&NR=8080813B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM SAM-WOONG</creatorcontrib><creatorcontrib>JANG KYUNG-IC</creatorcontrib><creatorcontrib>YE KYUNG-HWAN</creatorcontrib><creatorcontrib>REIM YONG-SUP</creatorcontrib><title>Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter</title><description>An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKAjEQRNNYiPoP-wEK6jXWHorWan0suY0XSHZDslf4917AQjuZ4g3Mm7mJV2HwMQVkpbwGX8EYoGgerY6ZQBz4bwmQe4ikg_R1c5Kj5ycgWEGtLeBrsjyDDvR7XZqZw1Bo9eHCwPl0by8bStJRSWiJSbvH7bCdsmuO--YP5Q3J-kGZ</recordid><startdate>20111220</startdate><enddate>20111220</enddate><creator>KIM SAM-WOONG</creator><creator>JANG KYUNG-IC</creator><creator>YE KYUNG-HWAN</creator><creator>REIM YONG-SUP</creator><scope>EVB</scope></search><sort><creationdate>20111220</creationdate><title>Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter</title><author>KIM SAM-WOONG ; JANG KYUNG-IC ; YE KYUNG-HWAN ; REIM YONG-SUP</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8080813B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM SAM-WOONG</creatorcontrib><creatorcontrib>JANG KYUNG-IC</creatorcontrib><creatorcontrib>YE KYUNG-HWAN</creatorcontrib><creatorcontrib>REIM YONG-SUP</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM SAM-WOONG</au><au>JANG KYUNG-IC</au><au>YE KYUNG-HWAN</au><au>REIM YONG-SUP</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter</title><date>2011-12-20</date><risdate>2011</risdate><abstract>An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US8080813B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY |
title | Ion implanter, internal structure of ion implanter and method of forming a coating layer in the ion implanter |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T08%3A56%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KIM%20SAM-WOONG&rft.date=2011-12-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8080813B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |