Reduction of macro level stresses in copper/low-K wafers

A pad structure and passivation scheme which reduces or eliminates IMC cracking in post wire bonded dies during Cu/Low-k BEOL processing. A thick 120 nm barrier layer can be provided between a 1.2 μm aluminum layer and copper. Another possibility is to effectively split up the barrier layer, where t...

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Bibliographische Detailangaben

Hauptverfasser:	PALLINTI JAYANTHI, SUN SEY-SHING, BURKE PETER, BHATT HEMANSHU, KAO CHIYI, YING HONG, VIJAY DILIP
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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