Technique for forming metal lines in a semiconductor by adapting the temperature dependence of the line resistance
By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor...
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| creator | LEHR MATTHIAS LANGER ECKHARD MEYER MORITZ ANDREAS |
| description | By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS |
| title | Technique for forming metal lines in a semiconductor by adapting the temperature dependence of the line resistance |
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