Bipolar transistor

A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: STENSON BERNARD PATRICK, BOWERS DEREK FREDERICK, DEIGNAN ANNE MARIA, BAIN ANDREW DAVID, DUNBAR MICHAEL THOMAS, DALY PAUL MALACHY, MCGUINESS PATRICK MARTIN, LANE WILLIAM ALLAN
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator STENSON BERNARD PATRICK
BOWERS DEREK FREDERICK
DEIGNAN ANNE MARIA
BAIN ANDREW DAVID
DUNBAR MICHAEL THOMAS
DALY PAUL MALACHY
MCGUINESS PATRICK MARTIN
LANE WILLIAM ALLAN
description A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8058704B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8058704B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8058704B23</originalsourceid><addsrcrecordid>eNrjZBByyizIz0ksUigpSswrziwuyS_iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEWBqYW5gYmTkbGRCgBANl9IA0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Bipolar transistor</title><source>esp@cenet</source><creator>STENSON BERNARD PATRICK ; BOWERS DEREK FREDERICK ; DEIGNAN ANNE MARIA ; BAIN ANDREW DAVID ; DUNBAR MICHAEL THOMAS ; DALY PAUL MALACHY ; MCGUINESS PATRICK MARTIN ; LANE WILLIAM ALLAN</creator><creatorcontrib>STENSON BERNARD PATRICK ; BOWERS DEREK FREDERICK ; DEIGNAN ANNE MARIA ; BAIN ANDREW DAVID ; DUNBAR MICHAEL THOMAS ; DALY PAUL MALACHY ; MCGUINESS PATRICK MARTIN ; LANE WILLIAM ALLAN</creatorcontrib><description>A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20111115&amp;DB=EPODOC&amp;CC=US&amp;NR=8058704B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20111115&amp;DB=EPODOC&amp;CC=US&amp;NR=8058704B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>STENSON BERNARD PATRICK</creatorcontrib><creatorcontrib>BOWERS DEREK FREDERICK</creatorcontrib><creatorcontrib>DEIGNAN ANNE MARIA</creatorcontrib><creatorcontrib>BAIN ANDREW DAVID</creatorcontrib><creatorcontrib>DUNBAR MICHAEL THOMAS</creatorcontrib><creatorcontrib>DALY PAUL MALACHY</creatorcontrib><creatorcontrib>MCGUINESS PATRICK MARTIN</creatorcontrib><creatorcontrib>LANE WILLIAM ALLAN</creatorcontrib><title>Bipolar transistor</title><description>A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBByyizIz0ksUigpSswrziwuyS_iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxocEWBqYW5gYmTkbGRCgBANl9IA0</recordid><startdate>20111115</startdate><enddate>20111115</enddate><creator>STENSON BERNARD PATRICK</creator><creator>BOWERS DEREK FREDERICK</creator><creator>DEIGNAN ANNE MARIA</creator><creator>BAIN ANDREW DAVID</creator><creator>DUNBAR MICHAEL THOMAS</creator><creator>DALY PAUL MALACHY</creator><creator>MCGUINESS PATRICK MARTIN</creator><creator>LANE WILLIAM ALLAN</creator><scope>EVB</scope></search><sort><creationdate>20111115</creationdate><title>Bipolar transistor</title><author>STENSON BERNARD PATRICK ; BOWERS DEREK FREDERICK ; DEIGNAN ANNE MARIA ; BAIN ANDREW DAVID ; DUNBAR MICHAEL THOMAS ; DALY PAUL MALACHY ; MCGUINESS PATRICK MARTIN ; LANE WILLIAM ALLAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8058704B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>STENSON BERNARD PATRICK</creatorcontrib><creatorcontrib>BOWERS DEREK FREDERICK</creatorcontrib><creatorcontrib>DEIGNAN ANNE MARIA</creatorcontrib><creatorcontrib>BAIN ANDREW DAVID</creatorcontrib><creatorcontrib>DUNBAR MICHAEL THOMAS</creatorcontrib><creatorcontrib>DALY PAUL MALACHY</creatorcontrib><creatorcontrib>MCGUINESS PATRICK MARTIN</creatorcontrib><creatorcontrib>LANE WILLIAM ALLAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>STENSON BERNARD PATRICK</au><au>BOWERS DEREK FREDERICK</au><au>DEIGNAN ANNE MARIA</au><au>BAIN ANDREW DAVID</au><au>DUNBAR MICHAEL THOMAS</au><au>DALY PAUL MALACHY</au><au>MCGUINESS PATRICK MARTIN</au><au>LANE WILLIAM ALLAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Bipolar transistor</title><date>2011-11-15</date><risdate>2011</risdate><abstract>A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US8058704B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Bipolar transistor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T11%3A04%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=STENSON%20BERNARD%20PATRICK&rft.date=2011-11-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8058704B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true