Method and apparatus for storing data in a write-once non-volatile memory

In an illustrative embodiment, a memory cell comprises a first and a second MOSFET, wherein the first MOSFET undergoes a process to modify the threshold voltage such that a modified threshold voltage represents a first stored logic value. By determining which one of the first and the second MOSFETs...

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Bibliographische Detailangaben

1. Verfasser:	HARRIS EDWARD B
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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