Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production

A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons fro...

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Hauptverfasser:	ODDOU JEAN-PIERRE, LEGENDRE CHRISTOPHE, LEININGER HUGUES, ALIEU JEROME, VINCENT MARC, GUILLAUMET SIMON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	ODDOU JEAN-PIERRE LEGENDRE CHRISTOPHE LEININGER HUGUES ALIEU JEROME VINCENT MARC GUILLAUMET SIMON
description	A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production
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