Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures

Embodiments of the invention include a copper interconnect structure having increased electromigration lifetime. Such structures can include a semiconductor substrate having a copper layer formed thereon. A dielectric barrier stack is formed on the copper layer. The dielectric barrier stack includes...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CUI HAO, CATABAY WILBUR G, BURKE PETER A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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