Manufacturing method and manufacturing system of semiconductor device
In an exposure process forming a predetermined circuit pattern of a semiconductor device on a wafer, a resist dimension of the resist pattern formed on a wafer and a focus position in the exposure process at a past time are measured. A resist dimension and a focus position of a wafer to which the ex...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KAWACHI TOSHIHIDE TASHIRO TAKESHI YAMASHITA SHIGENORI FUDO HIDEKIMI MIWA TOSHIHARU KONISHI JUNKO |
| description | In an exposure process forming a predetermined circuit pattern of a semiconductor device on a wafer, a resist dimension of the resist pattern formed on a wafer and a focus position in the exposure process at a past time are measured. A resist dimension and a focus position of a wafer to which the exposure process is secondly performed are estimated by using measurement results of the measured resist dimension and focus position, and a focus offset value is calculated by using estimated values of the estimated resist dimension and focus position. Then, an exposure dose is calculated with considering this focus offset value, and a resist pattern is formed on the wafer to which the exposure process is performed by using the calculated exposure dose and focus offset value. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8043772B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8043772B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8043772B23</originalsourceid><addsrcrecordid>eNrjZHD1TcwrTUtMLiktysxLV8hNLcnIT1FIzEtRyEWRKK4sLknNVchPUyhOzc1Mzs9LKU0uyS9SSEkty0xO5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBFgYmxubmRk5GxkQoAQDxlzPB</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Manufacturing method and manufacturing system of semiconductor device</title><source>esp@cenet</source><creator>KAWACHI TOSHIHIDE ; TASHIRO TAKESHI ; YAMASHITA SHIGENORI ; FUDO HIDEKIMI ; MIWA TOSHIHARU ; KONISHI JUNKO</creator><creatorcontrib>KAWACHI TOSHIHIDE ; TASHIRO TAKESHI ; YAMASHITA SHIGENORI ; FUDO HIDEKIMI ; MIWA TOSHIHARU ; KONISHI JUNKO</creatorcontrib><description>In an exposure process forming a predetermined circuit pattern of a semiconductor device on a wafer, a resist dimension of the resist pattern formed on a wafer and a focus position in the exposure process at a past time are measured. A resist dimension and a focus position of a wafer to which the exposure process is secondly performed are estimated by using measurement results of the measured resist dimension and focus position, and a focus offset value is calculated by using estimated values of the estimated resist dimension and focus position. Then, an exposure dose is calculated with considering this focus offset value, and a resist pattern is formed on the wafer to which the exposure process is performed by using the calculated exposure dose and focus offset value.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111025&DB=EPODOC&CC=US&NR=8043772B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111025&DB=EPODOC&CC=US&NR=8043772B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWACHI TOSHIHIDE</creatorcontrib><creatorcontrib>TASHIRO TAKESHI</creatorcontrib><creatorcontrib>YAMASHITA SHIGENORI</creatorcontrib><creatorcontrib>FUDO HIDEKIMI</creatorcontrib><creatorcontrib>MIWA TOSHIHARU</creatorcontrib><creatorcontrib>KONISHI JUNKO</creatorcontrib><title>Manufacturing method and manufacturing system of semiconductor device</title><description>In an exposure process forming a predetermined circuit pattern of a semiconductor device on a wafer, a resist dimension of the resist pattern formed on a wafer and a focus position in the exposure process at a past time are measured. A resist dimension and a focus position of a wafer to which the exposure process is secondly performed are estimated by using measurement results of the measured resist dimension and focus position, and a focus offset value is calculated by using estimated values of the estimated resist dimension and focus position. Then, an exposure dose is calculated with considering this focus offset value, and a resist pattern is formed on the wafer to which the exposure process is performed by using the calculated exposure dose and focus offset value.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD1TcwrTUtMLiktysxLV8hNLcnIT1FIzEtRyEWRKK4sLknNVchPUyhOzc1Mzs9LKU0uyS9SSEkty0xO5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHBFgYmxubmRk5GxkQoAQDxlzPB</recordid><startdate>20111025</startdate><enddate>20111025</enddate><creator>KAWACHI TOSHIHIDE</creator><creator>TASHIRO TAKESHI</creator><creator>YAMASHITA SHIGENORI</creator><creator>FUDO HIDEKIMI</creator><creator>MIWA TOSHIHARU</creator><creator>KONISHI JUNKO</creator><scope>EVB</scope></search><sort><creationdate>20111025</creationdate><title>Manufacturing method and manufacturing system of semiconductor device</title><author>KAWACHI TOSHIHIDE ; TASHIRO TAKESHI ; YAMASHITA SHIGENORI ; FUDO HIDEKIMI ; MIWA TOSHIHARU ; KONISHI JUNKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8043772B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWACHI TOSHIHIDE</creatorcontrib><creatorcontrib>TASHIRO TAKESHI</creatorcontrib><creatorcontrib>YAMASHITA SHIGENORI</creatorcontrib><creatorcontrib>FUDO HIDEKIMI</creatorcontrib><creatorcontrib>MIWA TOSHIHARU</creatorcontrib><creatorcontrib>KONISHI JUNKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWACHI TOSHIHIDE</au><au>TASHIRO TAKESHI</au><au>YAMASHITA SHIGENORI</au><au>FUDO HIDEKIMI</au><au>MIWA TOSHIHARU</au><au>KONISHI JUNKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method and manufacturing system of semiconductor device</title><date>2011-10-25</date><risdate>2011</risdate><abstract>In an exposure process forming a predetermined circuit pattern of a semiconductor device on a wafer, a resist dimension of the resist pattern formed on a wafer and a focus position in the exposure process at a past time are measured. A resist dimension and a focus position of a wafer to which the exposure process is secondly performed are estimated by using measurement results of the measured resist dimension and focus position, and a focus offset value is calculated by using estimated values of the estimated resist dimension and focus position. Then, an exposure dose is calculated with considering this focus offset value, and a resist pattern is formed on the wafer to which the exposure process is performed by using the calculated exposure dose and focus offset value.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US8043772B2 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Manufacturing method and manufacturing system of semiconductor device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T15%3A38%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAWACHI%20TOSHIHIDE&rft.date=2011-10-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8043772B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |