Array operation using a schottky diode as a non-ohmic isolation device

A two-terminal memory cell including a Schottky metal-semiconductor contact as a non-ohmic device (NOD) allows selection of two-terminal cross-point memory array operating voltages that eliminate "half-select leakage current" problems present when other types of non-ohmic devices are used. The NOD structure can comprise a "metal/oxide semiconductor/metal" or a "metal/lightly-doped single layer polycrystalline silicon." The memory cell can include a two-terminal memory element including at least one conductive oxide layer (e.g., a conductive metal oxide-CMO, such as a perovskite or a conductive binary oxide) and an electronically insulating layer (e.g., yttria-stabilized zirconia-YSZ) in contact with the CMO. The NOD can be included in the memory cell and configured electrically in series with the memory element. The memory cell can be positioned in a two-terminal cross-point array between a pair of conductive array lines (e.g., a bit line and a word line) across which voltages for data operations are applied.