Dopant implantation method using multi-step implants

A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WU BONE-FONG, CHUANG YEN, TING CHIEH CHIH, WANG SHAO HUA, CHEN PU-FANG, CHANG TSE-EN, CHANG CHIH-FU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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