Method for resetting a resistive change memory element

Method for resetting a resistive change memory element

A method of resetting a resistive change memory element is disclosed. The method comprises performing a series of programming operations-for example, a programming pulse of a predetermined voltage level and pulse width-on a resistive change memory element in order to incrementally increase the resis...

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Hauptverfasser: HAMILTON DARLENE, CLEAVELIN RINN
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator HAMILTON DARLENE
CLEAVELIN RINN
description A method of resetting a resistive change memory element is disclosed. The method comprises performing a series of programming operations-for example, a programming pulse of a predetermined voltage level and pulse width-on a resistive change memory element in order to incrementally increase the resistance of the memory element above some predefined threshold. Prior to each programming operation, the resistive state of the memory element is measured and used to determine the parameters used in that programming operation. If this measured resistance value is above a first threshold value, the memory element is determined to already be in a reset state and no further programming operation is performed. If this measured resistance value is below a second threshold value, this second threshold value being less than the first threshold value, a first set of programming parameters are used within the programming operation. If this initial value is above the second threshold value but below the first threshold value, a second set of programming parameters are used within the programming operation.
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The method comprises performing a series of programming operations-for example, a programming pulse of a predetermined voltage level and pulse width-on a resistive change memory element in order to incrementally increase the resistance of the memory element above some predefined threshold. Prior to each programming operation, the resistive state of the memory element is measured and used to determine the parameters used in that programming operation. If this measured resistance value is above a first threshold value, the memory element is determined to already be in a reset state and no further programming operation is performed. If this measured resistance value is below a second threshold value, this second threshold value being less than the first threshold value, a first set of programming parameters are used within the programming operation. 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The method comprises performing a series of programming operations-for example, a programming pulse of a predetermined voltage level and pulse width-on a resistive change memory element in order to incrementally increase the resistance of the memory element above some predefined threshold. Prior to each programming operation, the resistive state of the memory element is measured and used to determine the parameters used in that programming operation. If this measured resistance value is above a first threshold value, the memory element is determined to already be in a reset state and no further programming operation is performed. If this measured resistance value is below a second threshold value, this second threshold value being less than the first threshold value, a first set of programming parameters are used within the programming operation. 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subjects ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Method for resetting a resistive change memory element
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