Semiconductor memory device, method of manufacturing the same, and method of screening the same
A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive f...
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| creator | KOMURA MASANORI SATO MITSURU KISHIDA MOTOYA MUROOKA KENICHI |
| description | A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line. |
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| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Semiconductor memory device, method of manufacturing the same, and method of screening the same |
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