Manufacturing method of semiconductor device

A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer periphery of a first area. A cell portion formed in the first area includes a first base layer of a seco...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOUZUKI SHIGEO, AIDA SATOSHI, IZUMISAWA MASARU, YOSHIOKA HIRONORI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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