Charge transfer device
A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between.
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creator | MATSUYAMA EIJI |
description | A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7993952B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7993952B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7993952B23</originalsourceid><addsrcrecordid>eNrjZBBzzkgsSk9VKClKzCtOSy1SSEkty0xO5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHB5paWxpamRk5GxkQoAQBaOyFG</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Charge transfer device</title><source>esp@cenet</source><creator>MATSUYAMA EIJI</creator><creatorcontrib>MATSUYAMA EIJI</creatorcontrib><description>A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110809&DB=EPODOC&CC=US&NR=7993952B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110809&DB=EPODOC&CC=US&NR=7993952B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUYAMA EIJI</creatorcontrib><title>Charge transfer device</title><description>A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBzzkgsSk9VKClKzCtOSy1SSEkty0xO5WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8aHB5paWxpamRk5GxkQoAQBaOyFG</recordid><startdate>20110809</startdate><enddate>20110809</enddate><creator>MATSUYAMA EIJI</creator><scope>EVB</scope></search><sort><creationdate>20110809</creationdate><title>Charge transfer device</title><author>MATSUYAMA EIJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7993952B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUYAMA EIJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUYAMA EIJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Charge transfer device</title><date>2011-08-09</date><risdate>2011</risdate><abstract>A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Charge transfer device |
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