Thermal switch for integrated circuits, design structure, and method of sensing temperature

A single-ended thermal switch, design structure, and method of sensing temperature. A circuit includes a first MOS transistor and a second MOS transistor connected in series between a first power supply and a second power supply. The circuit apparatus also includes a signal conditioner connected to...

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Bibliographische Detailangaben
1. Verfasser: BERNSTEIN KERRY
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A single-ended thermal switch, design structure, and method of sensing temperature. A circuit includes a first MOS transistor and a second MOS transistor connected in series between a first power supply and a second power supply. The circuit apparatus also includes a signal conditioner connected to a node between the first and second MOS transistors. The first MOS transistor and the second MOS transistor are configured such that a leakage current of the second MOS transistor decreases a voltage of the node below a switch point of the signal conditioner when the temperature exceeds a threshold temperature.