Semiconductor device and method for manufacturing the same

A gate electrode of one of an nFET and a pFET includes a metal-containing layer in contact with a gate insulating film and a first silicon-containing layer formed on the metal-containing layer, and a gate electrode of the other FET includes a second silicon-containing layer in contact with a gate in...

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Bibliographische Detailangaben

Hauptverfasser:	KANEGAE KENSHI, YAMADA TAKAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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