Producing SOI structure using high-purity ion shower

Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.

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Hauptverfasser: MASCHMEYER RICHARD ORR, CITES JEFFREY SCOTT, GADKAREE KISHOR PURUSHOTTAM
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creator MASCHMEYER RICHARD ORR
CITES JEFFREY SCOTT
GADKAREE KISHOR PURUSHOTTAM
description Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Producing SOI structure using high-purity ion shower
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