Producing SOI structure using high-purity ion shower
Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
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creator | MASCHMEYER RICHARD ORR CITES JEFFREY SCOTT GADKAREE KISHOR PURUSHOTTAM |
description | Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7927970B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7927970B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7927970B23</originalsourceid><addsrcrecordid>eNrjZDAJKMpPKU3OzEtXCPb3VCguKSpNLiktSlUoLQaJZWSmZ-gWlBZlllQqZObnKRRn5JenFvEwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYHNLI3NLcwMnI2MilAAA6cssxA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Producing SOI structure using high-purity ion shower</title><source>esp@cenet</source><creator>MASCHMEYER RICHARD ORR ; CITES JEFFREY SCOTT ; GADKAREE KISHOR PURUSHOTTAM</creator><creatorcontrib>MASCHMEYER RICHARD ORR ; CITES JEFFREY SCOTT ; GADKAREE KISHOR PURUSHOTTAM</creatorcontrib><description>Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110419&DB=EPODOC&CC=US&NR=7927970B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110419&DB=EPODOC&CC=US&NR=7927970B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MASCHMEYER RICHARD ORR</creatorcontrib><creatorcontrib>CITES JEFFREY SCOTT</creatorcontrib><creatorcontrib>GADKAREE KISHOR PURUSHOTTAM</creatorcontrib><title>Producing SOI structure using high-purity ion shower</title><description>Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAJKMpPKU3OzEtXCPb3VCguKSpNLiktSlUoLQaJZWSmZ-gWlBZlllQqZObnKRRn5JenFvEwsKYl5hSn8kJpbgYFN9cQZw_d1IL8-NTigsTk1LzUkvjQYHNLI3NLcwMnI2MilAAA6cssxA</recordid><startdate>20110419</startdate><enddate>20110419</enddate><creator>MASCHMEYER RICHARD ORR</creator><creator>CITES JEFFREY SCOTT</creator><creator>GADKAREE KISHOR PURUSHOTTAM</creator><scope>EVB</scope></search><sort><creationdate>20110419</creationdate><title>Producing SOI structure using high-purity ion shower</title><author>MASCHMEYER RICHARD ORR ; CITES JEFFREY SCOTT ; GADKAREE KISHOR PURUSHOTTAM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7927970B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MASCHMEYER RICHARD ORR</creatorcontrib><creatorcontrib>CITES JEFFREY SCOTT</creatorcontrib><creatorcontrib>GADKAREE KISHOR PURUSHOTTAM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MASCHMEYER RICHARD ORR</au><au>CITES JEFFREY SCOTT</au><au>GADKAREE KISHOR PURUSHOTTAM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Producing SOI structure using high-purity ion shower</title><date>2011-04-19</date><risdate>2011</risdate><abstract>Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Producing SOI structure using high-purity ion shower |
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