Reduction of sheet resistance of phosphorus implanted poly-silicon

There is a process for reducing the sheet resistance of phosphorus-implanted poly-silicon. In an example embodiment, there is an MOS transistor structure. The structure has a gate region, drain region and a source region. A method for reducing the sheet resistance of the gate region comprises deposi...

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Bibliographische Detailangaben

Hauptverfasser:	EUEN WOLFGANG, GROSS STEPHAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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