Method for reducing agglomeration of Si layer, method for manufacturing semiconductor device and vacuum treatment apparatus

The present invention provides a method for reducing the agglomeration of a Si layer in an SOI substrate, which can prevent the agglomeration of the Si layer from occurring in a heating and temperature-raising process for the Si layer, when heating and temperature-raising the Si layer that is the ou...

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Bibliographische Detailangaben

Hauptverfasser:	DATE HIROKI, NAKATSURU JUNKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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