Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

In a semiconductor device, a region under a pad electrode with a bump can be utilized efficiently and a large amount of force is prevented from applying locally to a semiconductor substrate under the bump when the semiconductor device is mounted. A first layer metal wiring is formed on the semicondu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: UEHARA MASAFUMI, ISHIZEKI HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator UEHARA MASAFUMI
ISHIZEKI HIROSHI
description In a semiconductor device, a region under a pad electrode with a bump can be utilized efficiently and a large amount of force is prevented from applying locally to a semiconductor substrate under the bump when the semiconductor device is mounted. A first layer metal wiring is formed on the semiconductor substrate. A pad electrode is formed on the first layer metal wiring through an interlayer insulation film. The pad electrode is connected with the first layer metal wiring through a via hole that is formed in the interlayer insulation film. A protection film is formed on the pad electrode. The protection film has an opening to expose the pad electrode and an island-shaped protection film formed in the opening. An Au bump connected with the pad electrode through the opening in the protection film is formed on the pad electrode. The via hole is formed under the island-shaped protection film, and incompletely filled with a portion of the pad electrode.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7915731B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7915731B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7915731B23</originalsourceid><addsrcrecordid>eNrjZDANTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE3MK01LTC4pLcrMS1fITS3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhweaWhqbmxoZORsZEKAEATHwtdA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and manufacturing method thereof</title><source>esp@cenet</source><creator>UEHARA MASAFUMI ; ISHIZEKI HIROSHI</creator><creatorcontrib>UEHARA MASAFUMI ; ISHIZEKI HIROSHI</creatorcontrib><description>In a semiconductor device, a region under a pad electrode with a bump can be utilized efficiently and a large amount of force is prevented from applying locally to a semiconductor substrate under the bump when the semiconductor device is mounted. A first layer metal wiring is formed on the semiconductor substrate. A pad electrode is formed on the first layer metal wiring through an interlayer insulation film. The pad electrode is connected with the first layer metal wiring through a via hole that is formed in the interlayer insulation film. A protection film is formed on the pad electrode. The protection film has an opening to expose the pad electrode and an island-shaped protection film formed in the opening. An Au bump connected with the pad electrode through the opening in the protection film is formed on the pad electrode. The via hole is formed under the island-shaped protection film, and incompletely filled with a portion of the pad electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110329&amp;DB=EPODOC&amp;CC=US&amp;NR=7915731B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110329&amp;DB=EPODOC&amp;CC=US&amp;NR=7915731B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UEHARA MASAFUMI</creatorcontrib><creatorcontrib>ISHIZEKI HIROSHI</creatorcontrib><title>Semiconductor device and manufacturing method thereof</title><description>In a semiconductor device, a region under a pad electrode with a bump can be utilized efficiently and a large amount of force is prevented from applying locally to a semiconductor substrate under the bump when the semiconductor device is mounted. A first layer metal wiring is formed on the semiconductor substrate. A pad electrode is formed on the first layer metal wiring through an interlayer insulation film. The pad electrode is connected with the first layer metal wiring through a via hole that is formed in the interlayer insulation film. A protection film is formed on the pad electrode. The protection film has an opening to expose the pad electrode and an island-shaped protection film formed in the opening. An Au bump connected with the pad electrode through the opening in the protection film is formed on the pad electrode. The via hole is formed under the island-shaped protection film, and incompletely filled with a portion of the pad electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE3MK01LTC4pLcrMS1fITS3JyE9RKMlILUrNT-NhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhweaWhqbmxoZORsZEKAEATHwtdA</recordid><startdate>20110329</startdate><enddate>20110329</enddate><creator>UEHARA MASAFUMI</creator><creator>ISHIZEKI HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>20110329</creationdate><title>Semiconductor device and manufacturing method thereof</title><author>UEHARA MASAFUMI ; ISHIZEKI HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7915731B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>UEHARA MASAFUMI</creatorcontrib><creatorcontrib>ISHIZEKI HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UEHARA MASAFUMI</au><au>ISHIZEKI HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and manufacturing method thereof</title><date>2011-03-29</date><risdate>2011</risdate><abstract>In a semiconductor device, a region under a pad electrode with a bump can be utilized efficiently and a large amount of force is prevented from applying locally to a semiconductor substrate under the bump when the semiconductor device is mounted. A first layer metal wiring is formed on the semiconductor substrate. A pad electrode is formed on the first layer metal wiring through an interlayer insulation film. The pad electrode is connected with the first layer metal wiring through a via hole that is formed in the interlayer insulation film. A protection film is formed on the pad electrode. The protection film has an opening to expose the pad electrode and an island-shaped protection film formed in the opening. An Au bump connected with the pad electrode through the opening in the protection film is formed on the pad electrode. The via hole is formed under the island-shaped protection film, and incompletely filled with a portion of the pad electrode.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US7915731B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device and manufacturing method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T21%3A25%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=UEHARA%20MASAFUMI&rft.date=2011-03-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7915731B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true