Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector

The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surfa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DEHLINGER GABRIEL K, SCHAUB JEREMY D, GRILL ALFRED, OUYANG QIQING, CHU JACK O, KOESTER STEVEN J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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