System and method for manufacturing an integrated circuit anti-fuse in conjunction with a tungsten plug process

A system and method are disclosed for manufacturing an integrated circuit anti-fuse in conjunction with a tungsten plug process. A tungsten plug is formed in a dielectric layer that overlies a portion of P type silicon and an adjacent portion of N type silicon. The dielectric layer is etched to crea...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TUCKER DAVID, KUSHWAHA ASHISH, MOUTINHO THOMAS JAMES, DRIZLIKH SERGEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!