Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being define...
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| creator | HOFFMAN DANIEL J GOLD EZRA ROBERT |
| description | For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension. An intersection of these relevant surfaces is found, the intersection corresponding to a target value of source power, bias power and chamber pressure. The source power, the bias power and the chamber pressure, respectively, are set to their corresponding target values. |
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The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension. An intersection of these relevant surfaces is found, the intersection corresponding to a target value of source power, bias power and chamber pressure. 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The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension. An intersection of these relevant surfaces is found, the intersection corresponding to a target value of source power, bias power and chamber pressure. The source power, the bias power and the chamber pressure, respectively, are set to their corresponding target values.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure |
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