RF circuits including transistors having strained material layers

Circuits for processing radio frequency ("RF") and microwave signals are fabricated using field effect transistors ("FETs") that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BRAITHWAITE GLYN, CURRIE MATTHEW, HAMMOND RICHARD
Format:	Patent
Sprache:	eng
Schlagworte:	AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATIONOF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION OF NOISE BY SUCH CIRCUITS GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER PULSE TECHNIQUE SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!