Charged particle beam apparatus

Charged particle beam apparatus

A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TANIMOTO SAYAKA, FUNATSU RYUICHI, MAKINO HIROSHI, OHTA HIROYA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator TANIMOTO SAYAKA
FUNATSU RYUICHI
MAKINO HIROSHI
OHTA HIROYA
description A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7906761B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7906761B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7906761B23</originalsourceid><addsrcrecordid>eNrjZJB3zkgsSk9NUShILCrJTM5JVUhKTcxVSCwA8hNLSot5GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakl8aLC5pYGZuZmhk5ExEUoA3KUkqA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Charged particle beam apparatus</title><source>esp@cenet</source><creator>TANIMOTO SAYAKA ; FUNATSU RYUICHI ; MAKINO HIROSHI ; OHTA HIROYA</creator><creatorcontrib>TANIMOTO SAYAKA ; FUNATSU RYUICHI ; MAKINO HIROSHI ; OHTA HIROYA</creatorcontrib><description>A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110315&amp;DB=EPODOC&amp;CC=US&amp;NR=7906761B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110315&amp;DB=EPODOC&amp;CC=US&amp;NR=7906761B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANIMOTO SAYAKA</creatorcontrib><creatorcontrib>FUNATSU RYUICHI</creatorcontrib><creatorcontrib>MAKINO HIROSHI</creatorcontrib><creatorcontrib>OHTA HIROYA</creatorcontrib><title>Charged particle beam apparatus</title><description>A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB3zkgsSk9NUShILCrJTM5JVUhKTcxVSCwA8hNLSot5GFjTEnOKU3mhNDeDgptriLOHbmpBfnxqcUFicmpeakl8aLC5pYGZuZmhk5ExEUoA3KUkqA</recordid><startdate>20110315</startdate><enddate>20110315</enddate><creator>TANIMOTO SAYAKA</creator><creator>FUNATSU RYUICHI</creator><creator>MAKINO HIROSHI</creator><creator>OHTA HIROYA</creator><scope>EVB</scope></search><sort><creationdate>20110315</creationdate><title>Charged particle beam apparatus</title><author>TANIMOTO SAYAKA ; FUNATSU RYUICHI ; MAKINO HIROSHI ; OHTA HIROYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7906761B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TANIMOTO SAYAKA</creatorcontrib><creatorcontrib>FUNATSU RYUICHI</creatorcontrib><creatorcontrib>MAKINO HIROSHI</creatorcontrib><creatorcontrib>OHTA HIROYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TANIMOTO SAYAKA</au><au>FUNATSU RYUICHI</au><au>MAKINO HIROSHI</au><au>OHTA HIROYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Charged particle beam apparatus</title><date>2011-03-15</date><risdate>2011</risdate><abstract>A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US7906761B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
title Charged particle beam apparatus
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T18%3A46%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TANIMOTO%20SAYAKA&rft.date=2011-03-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7906761B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true