Method for forming a metal silicide

Method for forming a metal silicide

The present application is directed to a method for forming a metal silicide layer. The method comprises providing a substrate comprising silicon and depositing a metal layer on the substrate. The metal layer is annealed within a first temperature range and for a first dwell time of about 10 millise...

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Hauptverfasser: DELOACH JUANITA, BU HAOWEN, EKBOTE SHASHANK
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator DELOACH JUANITA
BU HAOWEN
EKBOTE SHASHANK
description The present application is directed to a method for forming a metal silicide layer. The method comprises providing a substrate comprising silicon and depositing a metal layer on the substrate. The metal layer is annealed within a first temperature range and for a first dwell time of about 10 milliseconds or less to react at least a portion of the metal with the silicon to form a silicide. An unreacted portion of the metal is removed from the substrate. The silicide is annealed within a second temperature range for a second dwell time of about 10 milliseconds or less.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US7897513B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US7897513B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US7897513B23</originalsourceid><addsrcrecordid>eNrjZFD2TS3JyE9RSMsvAuHczLx0hUSF3NSSxByF4syczOTMlFQeBta0xJziVF4ozc2g4OYa4uyhm1qQH59aXJCYnJqXWhIfGmxuYWluamjsZGRMhBIAc-El4A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for forming a metal silicide</title><source>esp@cenet</source><creator>DELOACH JUANITA ; BU HAOWEN ; EKBOTE SHASHANK</creator><creatorcontrib>DELOACH JUANITA ; BU HAOWEN ; EKBOTE SHASHANK</creatorcontrib><description>The present application is directed to a method for forming a metal silicide layer. The method comprises providing a substrate comprising silicon and depositing a metal layer on the substrate. The metal layer is annealed within a first temperature range and for a first dwell time of about 10 milliseconds or less to react at least a portion of the metal with the silicon to form a silicide. An unreacted portion of the metal is removed from the substrate. The silicide is annealed within a second temperature range for a second dwell time of about 10 milliseconds or less.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110301&amp;DB=EPODOC&amp;CC=US&amp;NR=7897513B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110301&amp;DB=EPODOC&amp;CC=US&amp;NR=7897513B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DELOACH JUANITA</creatorcontrib><creatorcontrib>BU HAOWEN</creatorcontrib><creatorcontrib>EKBOTE SHASHANK</creatorcontrib><title>Method for forming a metal silicide</title><description>The present application is directed to a method for forming a metal silicide layer. The method comprises providing a substrate comprising silicon and depositing a metal layer on the substrate. The metal layer is annealed within a first temperature range and for a first dwell time of about 10 milliseconds or less to react at least a portion of the metal with the silicon to form a silicide. An unreacted portion of the metal is removed from the substrate. The silicide is annealed within a second temperature range for a second dwell time of about 10 milliseconds or less.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2TS3JyE9RSMsvAuHczLx0hUSF3NSSxByF4syczOTMlFQeBta0xJziVF4ozc2g4OYa4uyhm1qQH59aXJCYnJqXWhIfGmxuYWluamjsZGRMhBIAc-El4A</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>DELOACH JUANITA</creator><creator>BU HAOWEN</creator><creator>EKBOTE SHASHANK</creator><scope>EVB</scope></search><sort><creationdate>20110301</creationdate><title>Method for forming a metal silicide</title><author>DELOACH JUANITA ; BU HAOWEN ; EKBOTE SHASHANK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7897513B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DELOACH JUANITA</creatorcontrib><creatorcontrib>BU HAOWEN</creatorcontrib><creatorcontrib>EKBOTE SHASHANK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DELOACH JUANITA</au><au>BU HAOWEN</au><au>EKBOTE SHASHANK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming a metal silicide</title><date>2011-03-01</date><risdate>2011</risdate><abstract>The present application is directed to a method for forming a metal silicide layer. The method comprises providing a substrate comprising silicon and depositing a metal layer on the substrate. The metal layer is annealed within a first temperature range and for a first dwell time of about 10 milliseconds or less to react at least a portion of the metal with the silicon to form a silicide. An unreacted portion of the metal is removed from the substrate. The silicide is annealed within a second temperature range for a second dwell time of about 10 milliseconds or less.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for forming a metal silicide
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T12%3A35%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DELOACH%20JUANITA&rft.date=2011-03-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS7897513B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true