Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity

By providing a barrier layer stack including a thin SiCN layer for enhanced adhesion, a silicon nitride layer for confining a copper-based metal region (thereby also effectively avoiding any diffusion of oxygen and moisture into the copper region), and a SiCN layer, the total relative permittivity m...

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Bibliographische Detailangaben

Hauptverfasser:	KAHLERT VOLKER, LEHR MATTHIAS, HOHAGE JOERG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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