Power semiconductor devices having termination structures and methods of manufacture

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions h...

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Bibliographische Detailangaben
Hauptverfasser: JUNG JINYOUNG, LEE JAEGIL, CHALLA ASHOK, JANG HOCHEOL
Format: Patent
Sprache:eng
Schlagworte:
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