Semiconductor device and its manufacturing method

A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE YUOU, HSU HUNG-YI, SHIH YEAUNG, CHUNG HSIANG-HSIEN, CHENG TSUNGI, KUO CHING-YEH, CHANG JUIUNG, TSAO WEN-KUANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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