Wafer assembly having a contrast enhancing top anti-reflecting coating and method of lithographic processing
A method of fabricating a semiconductor device using lithography. The method can include providing a wafer assembly having a layer to be processed disposed under a photo resist layer and illuminating the wafer assembly with an exposure dose transmitted through a birefringent material disposed betwee...
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creator | KYE JONGWOOK LAFONTAINE BRUNO M TABERY CYRUS E PAWLOSKI ADAM R |
description | A method of fabricating a semiconductor device using lithography. The method can include providing a wafer assembly having a layer to be processed disposed under a photo resist layer and illuminating the wafer assembly with an exposure dose transmitted through a birefringent material disposed between a final optical element of an imaging subsystem used to transmit the exposure dose and the photo resist layer. Also disclosed is a wafer assembly from which at least one semiconductor device can be fabricated. The wafer assembly can include a layer to be processed, a photo resist layer disposed over the layer to be processed and a contrast enhancing, birefringent top anti-reflecting coating (TARC). |
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The method can include providing a wafer assembly having a layer to be processed disposed under a photo resist layer and illuminating the wafer assembly with an exposure dose transmitted through a birefringent material disposed between a final optical element of an imaging subsystem used to transmit the exposure dose and the photo resist layer. Also disclosed is a wafer assembly from which at least one semiconductor device can be fabricated. 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The method can include providing a wafer assembly having a layer to be processed disposed under a photo resist layer and illuminating the wafer assembly with an exposure dose transmitted through a birefringent material disposed between a final optical element of an imaging subsystem used to transmit the exposure dose and the photo resist layer. Also disclosed is a wafer assembly from which at least one semiconductor device can be fabricated. The wafer assembly can include a layer to be processed, a photo resist layer disposed over the layer to be processed and a contrast enhancing, birefringent top anti-reflecting coating (TARC).</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>ELECTROGRAPHY</subject><subject>FREQUENCY-CHANGING</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNikEKwjAQAHPxIOof9gMFRYs9K4p3FY9lTTdNIN0NySL4e1vxAZ5mGGZu4gMdZcBSaHjGN3h8Be4BwQprxqJA7JHtFFUSIGuoMrlIVqdmBb9E7mAg9dKBOIhhtD5j8sFCymKplPFampnDWGj148LA-XQ7XipK0lJJaIlJ2_t139T1etccNts_lg_UKkIR</recordid><startdate>20101221</startdate><enddate>20101221</enddate><creator>KYE JONGWOOK</creator><creator>LAFONTAINE BRUNO M</creator><creator>TABERY CYRUS E</creator><creator>PAWLOSKI ADAM R</creator><scope>EVB</scope></search><sort><creationdate>20101221</creationdate><title>Wafer assembly having a contrast enhancing top anti-reflecting coating and method of lithographic processing</title><author>KYE JONGWOOK ; LAFONTAINE BRUNO M ; TABERY CYRUS E ; PAWLOSKI ADAM R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US7855048B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>ELECTROGRAPHY</topic><topic>FREQUENCY-CHANGING</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>KYE JONGWOOK</creatorcontrib><creatorcontrib>LAFONTAINE BRUNO M</creatorcontrib><creatorcontrib>TABERY CYRUS E</creatorcontrib><creatorcontrib>PAWLOSKI ADAM R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KYE JONGWOOK</au><au>LAFONTAINE BRUNO M</au><au>TABERY CYRUS E</au><au>PAWLOSKI ADAM R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Wafer assembly having a contrast enhancing top anti-reflecting coating and method of lithographic processing</title><date>2010-12-21</date><risdate>2010</risdate><abstract>A method of fabricating a semiconductor device using lithography. The method can include providing a wafer assembly having a layer to be processed disposed under a photo resist layer and illuminating the wafer assembly with an exposure dose transmitted through a birefringent material disposed between a final optical element of an imaging subsystem used to transmit the exposure dose and the photo resist layer. Also disclosed is a wafer assembly from which at least one semiconductor device can be fabricated. The wafer assembly can include a layer to be processed, a photo resist layer disposed over the layer to be processed and a contrast enhancing, birefringent top anti-reflecting coating (TARC).</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTROGRAPHY FREQUENCY-CHANGING HOLOGRAPHY MATERIALS THEREFOR NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
title | Wafer assembly having a contrast enhancing top anti-reflecting coating and method of lithographic processing |
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