Isolated vertical power device structure with both N-doped and P-doped trenches

A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction region of the device. In a front surface of the substrate, front isolation wall trenches are formed around...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	BLANCHARD RICHARD AUSTIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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