Concurrent programming of non-volatile memory

One embodiment of the present invention includes applying a first value to a bit line, boosting word lines associated with the bit line and a common selection line to create a first condition based on the first value, and cutting off a boundary non-volatile storage element associated with the common...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	GUTERMAN DANIEL C
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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