Methods of manufacturing oxide semiconductor thin film transistor

Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an an...

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Bibliographische Detailangaben

Hauptverfasser:	JUNG JISIM, SON KYUNGSEOK, KIM CHANGJUNG, KWON JANGYEON, LEE SANGYOON, PARK YOUNGSOO, KIM TAESANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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