DRAM device and method of manufacturing the same

In a DRAM device and a method of manufacturing the same, a multiple tunnel junction (MTJ) structure is provided, which includes conductive patterns and nonconductive patterns alternately stacked on each other. The nonconductive patterns have a band gap larger than a band gap of the conductive patter...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YOON HONG-SIK, YEO IN-SEOK, HUO ZONG-LIANG, BAIK SEUNG-JAE, KIM SHI-EUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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