Semiconductor device having a nickel silicide layer on a single crystal silicon layer

A semiconductor device includes: a first MOSFET including: first source and drain regions formed at a distance from each other in a first semiconductor region; a first insulating film formed on the first semiconductor region between the first source region and the first drain region; a first gate el...

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Bibliographische Detailangaben

1. Verfasser:	TSUCHIAKI MASAKATSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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