Method of treating an exposed conductive film prior to forming a silicide

A method of manufacturing a semiconductor device includes forming a first conductive film on a semiconductor substrate via a first insulating film; forming a second conductive film on the first conductive film via a second insulating film; patterning the first and the second conductive films and the...

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1. Verfasser: FUKUHARA JOTA
Format: Patent
Sprache:eng
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