Method of producing thin films of compound I-III-VI, promoting the incorporation of III elements in the film
The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS fil...
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| creator | GUIMARD DENIS TAUNIER STEPHANE GRAND PIERRE-PHILIPPE LINCOT DANIEL GUILLEMOLES JEAN-FRANCOIS |
| description | The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films. |
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According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.</description><language>eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY ORREFINING OF METALS ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100817&DB=EPODOC&CC=US&NR=7776203B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100817&DB=EPODOC&CC=US&NR=7776203B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GUIMARD DENIS</creatorcontrib><creatorcontrib>TAUNIER STEPHANE</creatorcontrib><creatorcontrib>GRAND PIERRE-PHILIPPE</creatorcontrib><creatorcontrib>LINCOT DANIEL</creatorcontrib><creatorcontrib>GUILLEMOLES JEAN-FRANCOIS</creatorcontrib><title>Method of producing thin films of compound I-III-VI, promoting the incorporation of III elements in the film</title><description>The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. 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According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY ORREFINING OF METALS SEMICONDUCTOR DEVICES |
| title | Method of producing thin films of compound I-III-VI, promoting the incorporation of III elements in the film |
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