Semiconductor memory device and fabrication method thereof

Semiconductor memory device and fabrication method thereof

A semiconductor memory device comprises a heater electrode, a phase change portion, and an upper electrode. The phase change portion is connected to the heater electrode in a first direction. The upper electrode has an upper surface, a lower surface and a hole. The hole pierces the upper electrode b...

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1. Verfasser: HAYAKAWA TSUTOMU
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A semiconductor memory device comprises a heater electrode, a phase change portion, and an upper electrode. The phase change portion is connected to the heater electrode in a first direction. The upper electrode has an upper surface, a lower surface and a hole. The hole pierces the upper electrode between the upper and the lower surfaces in the first direction. The hole has an inner wall, which is connected to the phase change portion in a second direction perpendicular to the first direction.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor memory device and fabrication method thereof
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